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FDS2572 - N-Channel MOSFET

FDS2572 Description

FDS2572 October 2001 FDS2572 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET® Trench MOSFET General .
® UltraFET devices combine characteristics that enable benchmark efficiency in power conversion applications.

FDS2572 Features

* RDS(ON) = 0.040Ω (Typ. ), VGS = 10V
* Qg(TOT) = 29nC (Typ. ), VGS = 10V
* Low QRR Body Diode
* Maximized efficiency at high frequencies

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