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FDS4435 P-Channel MOSFET

FDS4435 Description

FDS4435 October 2001 FDS4435 30V P-Channel PowerTrench® MOSFET General .
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

FDS4435 Features

* 8.8 A,
* 30 V RDS(ON) = 20 mΩ @ VGS =
* 10 V RDS(ON) = 35 mΩ @ VGS =
* 4.5 V
* Low gate charge (17nC typical)
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
* High power and current ha

FDS4435 Applications

* requiring a wide range of gave drive voltage ratings (4.5V
* 25V). Applications
* Power management
* Load switch

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