FQD20N06LE - 60V LOGIC N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQD20N06LE
Manufacturer	Fairchild ↗ Semiconductor
File Size	656.13 KB
Description	60V LOGIC N-Channel MOSFET
Datasheet	FQD20N06LE_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V Low gate charge ( typical 9.5 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirements allowing direct operation form logic drivers.
Built-in ESD Protection Diode D D G G S D-PAK FQD Series I-PAK G D S FQU Series S Absolute Maximum Ratings Symbol VDSS ID.

📁 FQD20N06LE Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 1, 2005 |