FQD5N60C - 600V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQD5N60C
Manufacturer	Fairchild ↗ Semiconductor
File Size	975.65 KB
Description	600V N-Channel MOSFET
Datasheet	FQD5N60C_FairchildSemiconductor.pdf

FQD5N60C / FQU5N60C

2.8 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A.
Low Gate Charge (Typ. 15 nC).
Low Crss (Typ. 6.5 pF).
100% Avalanche Tested.
RoHS compliant This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy.

📁 FQD5N60C Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Oct 6, 2013 |