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FQI19N20C 200V N-Channel MOSFET

FQI19N20C Description

www.DataSheet4U.com FQB19N20C/FQI19N20C QFET FQB19N20C/FQI19N20C 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI19N20C Features

* 19.0A, 200V, RDS(on) = 0.17Ω @VGS = 10 V Low gate charge ( typical 40.5 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ◀ {
* G S D2-PAK FQB Series I2-PAK G D S FQI Series G{ ▲

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200V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI19N20C-like datasheet