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FQP4N90 - 900V N-Channel MOSFET

FQP4N90 Description

FQP4N90 October 2001 QFET FQP4N90 900V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQP4N90 Features

* 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V Low gate charge ( typically 24 nC) Low Crss ( typically 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS ! " " " TO-220 IRF Series ! S Absolute Maximum Rati

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Datasheet Details

Part number
FQP4N90
Manufacturer
Fairchild Semiconductor
File Size
633.67 KB
Datasheet
FQP4N90_FairchildSemiconductor.pdf
Description
900V N-Channel MOSFET

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900V N-Channel MOSFET Fairchild Semiconductor
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