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FQU1N60C 600V N-Channel MOSFET

FQU1N60C Description

FQD1N60C / FQU1N60C N-Channel QFET® MOSFET April 2013 FQD1N60C / FQU1N60C N-Channel QFET® MOSFET 600 V, 1.0 A, 11.5 Ω .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

FQU1N60C Features

* 1 A, 600 V, RDS(on) = 11.5 Ω (Max. ) @ VGS = 10 V, ID = 0.5 A
* Low Gate Charge (Typ. 4.8 nC)
* Low Crss (Typ. 3.5 pF)
* 100% Avalanche Tested
* RoHS Compliant D G S D-PAK G D S I-PAK G! D !
* ◀▲
* ! S Absolute Maximum Ratings TC = 25°C un

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600V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQU1N60C-like datasheet