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IRF614B - 250V N-Channel MOSFET

IRF614B Description

IRF614B/IRFS614B November 2001 IRF614B/IRFS614B 250V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRF614B Features

* 2.8A, 250V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum

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Datasheet Details

Part number
IRF614B
Manufacturer
Fairchild Semiconductor
File Size
855.44 KB
Datasheet
IRF614B_FairchildSemiconductor.pdf
Description
250V N-Channel MOSFET

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250V N-Channel MOSFET Fairchild Semiconductor
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