IRF750 - Advanced Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRF750
Manufacturer	Fairchild ↗ Semiconductor
File Size	229.73 KB
Description	Advanced Power MOSFET
Datasheet	IRF750-FairchildSemiconductor.pdf

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 400V.
Low RDS(ON): 0.254Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1).

📁 IRF750 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: May 10, 2015 |