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IRFI510A Advanced Power MOSFET

IRFI510A Description

Advanced Power MOSFET .

IRFI510A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ. ) Ο IRFW/I510A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 5.6 A D2-PA

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Advanced Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFI510A-like datasheet