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IRFW640B N-Channel MOSFET

IRFW640B Description

IRFW640B / IRFI640B November 2001 IRFW640B / IRFI640B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFW640B Features

* 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK IRFW Series G D S I2-PAK IRFI S

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N-Channel MOSFET Fairchild Semiconductor
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