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IRFW710S Power MOSFET

IRFW710S Description

$GYDQFHG 3RZHU 026)(7 IRFW710S .

IRFW710S Features

* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max. ) @ VDS = 400V
* Low RDS(ON): 2.815Ω (Typ. ) Absolute Maximum Rating

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Power MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFW710S-like datasheet