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SSI10N60B 600V N-Channel MOSFET

SSI10N60B Description

SSW10N60B / SSI10N60B November 2001 SSW10N60B / SSI10N60B 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.

SSI10N60B Features

* 9.0A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D2-PAK SSW Series G D S I2-PAK SSI Ser

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600V N-Channel MOSFET Fairchild Semiconductor
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