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SSU1N60A Advanced Power MOSFET

SSU1N60A Description

www.DataSheet4U.com Advanced Power MOSFET .

SSU1N60A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ. ) SSR/U1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 0.9 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2.

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Advanced Power MOSFET Fairchild Semiconductor
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