Datasheet Details
- Part number
- LP750
- Manufacturer
- Filtronic Compound Semiconductors
- File Size
- 34.36 KB
- Datasheet
- LP750_FiltronicCompoundSemiconductors.pdf
- Description
- 0.5 W POWER PHEMT
LP750 Description
0.5 W POWER PHEMT * .
AND APPLICATIONS The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (.
LP750 Features
* 28 dBm Output Power at 1-dB Compression at 18 GHz
* 10 dB Power Gain at 18 GHz
* 24 dBm Output Power at 1-dB Compression at 3.3V
* 55% Power-Added Efficiency
DRAIN BOND PAD SOURCE BOND PAD (2x) GATE BOND PAD
LP750
LP750 Applications
* The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 750 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate
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