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LP750 Datasheet - Filtronic Compound Semiconductors

0.5 W POWER PHEMT

LP750 General Description

AND APPLICATIONS The LP750 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 750 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gat.

LP750 Datasheet (34.36 KB)

Preview of LP750 PDF

Datasheet Details

Part number:

LP750

Manufacturer:

Filtronic Compound Semiconductors

File Size:

34.36 KB

Description:

0.5 w power phemt.

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LP750 0.5 POWER PHEMT Filtronic Compound Semiconductors

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