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LP7612

HIGH DYNAMIC RANGE PHEMT

LP7612 Features

* 21 dBm Output Power at 1-dB Compression at 18 GHz

* 9.5 dB Power Gain at 18 GHz

* 1.0 dB Noise Figure at 18 GHz

* 55% Power-Added Efficiency DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7612 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9

LP7612 General Description

AND APPLICATIONS The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic.

LP7612 Datasheet (39.36 KB)

Preview of LP7612 PDF

Datasheet Details

Part number:

LP7612

Manufacturer:

Filtronic Compound Semiconductors

File Size:

39.36 KB

Description:

High dynamic range phemt.

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LP7612 HIGH DYNAMIC RANGE PHEMT Filtronic Compound Semiconductors

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