LP7612 Datasheet (Filtronic Compound Semiconductors)

LP7612, HIGH DYNAMIC RANGE PHEMT

AND APPLICATIONS The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate.

The recessed “mushroom” gate structure minimizes parasitic

LP7612 Features

* 21 dBm Output Power at 1-dB Compression at 18 GHz

* 9.5 dB Power Gain at 18 GHz

* 1.0 dB Noise Figure at 18 GHz

* 55% Power-Added Efficiency DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7612 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9