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LP7612 - HIGH DYNAMIC RANGE PHEMT

LP7612 Description

HIGH DYNAMIC RANGE PHEMT * .
AND APPLICATIONS The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor.

LP7612 Features

* 21 dBm Output Power at 1-dB Compression at 18 GHz
* 9.5 dB Power Gain at 18 GHz
* 1.0 dB Noise Figure at 18 GHz
* 55% Power-Added Efficiency DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7612 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9

LP7612 Applications

* The LP7612 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and

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HIGH DYNAMIC RANGE PHEMT Filtronic Compound Semiconductors
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