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LP750SOT89 Datasheet - Filtronic Compound Semiconductors

LP750SOT89 LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate str.

LP750SOT89_FiltronicCompoundSemiconductors.pdf

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Datasheet Details

Part number:

LP750SOT89

Manufacturer:

Filtronic Compound Semiconductors

File Size:

43.90 KB

Description:

Low noise/ high linearity packaged phemt.

LP750SOT89 Distributor

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LP750SOT89 LP750SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT Filtronic Compound Semiconductors