LP750SOT89 Datasheet - Filtronic Compound Semiconductors

LP750SOT89, LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

LP750SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT * .
AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility.

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Datasheet Details

Part number:

LP750SOT89

Manufacturer:

Filtronic Compound Semiconductors

File Size:

43.90 KB

Description:

LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT

Features

* 26 dBm Output Power at 1-dB Compression at 1.8 GHz
* 17 dB Power Gain at 1.8 GHz
* 0.7 dB Noise Figure
* 40 dBm Output IP3 at 1.8 GHz
* 55% Power-Added Efficiency

Applications

* The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes

LP750SOT89 Distributors

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LP750SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT Filtronic Compound Semiconductors

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