LP750SOT89 - LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.25 µm x 750 µm Schottky barrier gate, defined by electron-beam photolithography.
The recessed “mushroom” gate str
