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LP7512P70 Datasheet - Filtronic Compound Semiconductors

LP7512P70 PACKAGED ULTRA LOW NOISE PHEMT

AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure.

LP7512P70_FiltronicCompoundSemiconductors.pdf

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Datasheet Details

Part number:

LP7512P70

Manufacturer:

Filtronic Compound Semiconductors

File Size:

59.88 KB

Description:

Packaged ultra low noise phemt.

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LP7512P70 LP7512P70 PACKAGED ULTRA LOW NOISE PHEMT Filtronic Compound Semiconductors

LP7512P70 Distributor