LP7512P70 Datasheet - Filtronic Compound Semiconductors

LP7512P70, PACKAGED ULTRA LOW NOISE PHEMT

PACKAGED ULTRA LOW NOISE PHEMT * .
AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility.

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Datasheet Details

Part number:

LP7512P70

Manufacturer:

Filtronic Compound Semiconductors

File Size:

59.88 KB

Description:

PACKAGED ULTRA LOW NOISE PHEMT

Features

* 0.7 dB Noise Figure at 12 GHz
* 12 dB Associated Gain at 12 GHz
* 0.4 dB Noise Figure at 2 GHz
* 18 dB Associated Gain at 2 GHz
* Low DC Power Consumption: 30mW LP7512P70

Applications

* The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasi

LP7512P70 Distributors

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LP7512P70 PACKAGED ULTRA LOW NOISE PHEMT Filtronic Compound Semiconductors

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