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LP7512P70

PACKAGED ULTRA LOW NOISE PHEMT

LP7512P70 Features

* 0.7 dB Noise Figure at 12 GHz

* 12 dB Associated Gain at 12 GHz

* 0.4 dB Noise Figure at 2 GHz

* 18 dB Associated Gain at 2 GHz

* Low DC Power Consumption: 30mW LP7512P70

* DESCRIPTION AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium

LP7512P70 General Description

AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure.

LP7512P70 Datasheet (59.88 KB)

Preview of LP7512P70 PDF

Datasheet Details

Part number:

LP7512P70

Manufacturer:

Filtronic Compound Semiconductors

File Size:

59.88 KB

Description:

Packaged ultra low noise phemt.

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TAGS

LP7512P70 PACKAGED ULTRA LOW NOISE PHEMT Filtronic Compound Semiconductors

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