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LP7512P70 - PACKAGED ULTRA LOW NOISE PHEMT

Datasheet Summary

Description

AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate.

Features

  • S.
  • 0.7 dB Noise Figure at 12 GHz.
  • 12 dB Associated Gain at 12 GHz.
  • 0.4 dB Noise Figure at 2 GHz.
  • 18 dB Associated Gain at 2 GHz.
  • Low DC Power Consumption: 30mW LP7512P70.

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Datasheet Details

Part number LP7512P70
Manufacturer Filtronic Compound Semiconductors
File Size 59.88 KB
Description PACKAGED ULTRA LOW NOISE PHEMT
Datasheet download datasheet LP7512P70 Datasheet
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Full PDF Text Transcription

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PACKAGED ULTRA LOW NOISE PHEMT • FEATURES ♦ 0.7 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ 0.4 dB Noise Figure at 2 GHz ♦ 18 dB Associated Gain at 2 GHz ♦ Low DC Power Consumption: 30mW LP7512P70 • DESCRIPTION AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for optimum low noise performance.
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