Datasheet4U Logo Datasheet4U.com

LP750P100

PACKAGED 0.5 WATT POWER PHEMT

LP750P100 Features

* 41 dBm IP3 at 12 GHz 27.5 dBm P-1dB at 12 GHz 10.5 dB Power Gain at 12 GHz 2.5 dB Noise Figure at 12 GHz 60% Power-Added-Efficiency DESCRIPTION AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide

LP750P100 General Description

AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic g.

LP750P100 Datasheet (49.27 KB)

Preview of LP750P100 PDF

Datasheet Details

Part number:

LP750P100

Manufacturer:

Filtronic Compound Semiconductors

File Size:

49.27 KB

Description:

Packaged 0.5 watt power phemt.

📁 Related Datasheet

LP750 0.5 W POWER PHEMT (Filtronic Compound Semiconductors)

LP750SOT89 LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT (Filtronic Compound Semiconductors)

LP7510 PC Power Supply Supervisors (ETC)

LP75103122F Lithium Iron Phosphate Battery (EEMB)

LP7512 ULTRA LOW NOISE PHEMT (Filtronic Compound Semiconductors)

LP7512P70 PACKAGED ULTRA LOW NOISE PHEMT (Filtronic Compound Semiconductors)

LP7568130F Lithium Iron Phosphate Battery (EEMB)

LP75W-108 LED Optimized Drivers (EPtronics)

LP75W-108-C0700 LED Optimized Drivers (EPtronics)

LP75W-12 LED Optimized Drivers (EPtronics)

TAGS

LP750P100 PACKAGED 0.5 WATT POWER PHEMT Filtronic Compound Semiconductors

Image Gallery

LP750P100 Datasheet Preview Page 2 LP750P100 Datasheet Preview Page 3

LP750P100 Distributor