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LP750P100 Datasheet - Filtronic Compound Semiconductors

LP750P100, PACKAGED 0.5 WATT POWER PHEMT

LP750P100 PACKAGED 0.5 WATT POWER PHEMT * .
AND APPLICATIONS The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Tr.
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LP750P100_FiltronicCompoundSemiconductors.pdf

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Datasheet Details

Part number:

LP750P100

Manufacturer:

Filtronic Compound Semiconductors

File Size:

49.27 KB

Description:

PACKAGED 0.5 WATT POWER PHEMT

Applications

* The LP750P100 is a packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and ga

LP750P100 Distributors

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LP750P100 PACKAGED 0.5 WATT POWER PHEMT Filtronic Compound Semiconductors
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