LP7512 - ULTRA LOW NOISE PHEMT

Filtronic Compound Semiconductors

LP7512 Description

ULTRA LOW NOISE PHEMT * .
AND APPLICATIONS The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor.

LP7512 Features

* 0.6 dB Noise Figure at 12 GHz
* 12 dB Associated Gain at 12 GHz
* Low DC Power Consumption
* Excellent Phase Noise DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7512 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PA

LP7512 Applications

* The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and g

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LP7512 Datasheet Preview — Preview of LP7512 PDF

Datasheet Details

Part number: LP7512
Manufacturer: Filtronic Compound Semiconductors
File Size: 36.64 KB
Datasheet: LP7512_FiltronicCompoundSemiconductors.pdf
Description: ULTRA LOW NOISE PHEMT

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ULTRA LOW NOISE PHEMT Filtronic Compound Semiconductors

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LP7512 Stock/Price