Datasheet4U Logo Datasheet4U.com

LP7512

ULTRA LOW NOISE PHEMT

LP7512 Features

* 0.6 dB Noise Figure at 12 GHz

* 12 dB Associated Gain at 12 GHz

* Low DC Power Consumption

* Excellent Phase Noise DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7512 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PA

LP7512 General Description

AND APPLICATIONS The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic .

LP7512 Datasheet (36.64 KB)

Preview of LP7512 PDF

Datasheet Details

Part number:

LP7512

Manufacturer:

Filtronic Compound Semiconductors

File Size:

36.64 KB

Description:

Ultra low noise phemt.

📁 Related Datasheet

LP7510 PC Power Supply Supervisors (ETC)

LP75103122F Lithium Iron Phosphate Battery (EEMB)

LP7512P70 PACKAGED ULTRA LOW NOISE PHEMT (Filtronic Compound Semiconductors)

LP750 0.5 W POWER PHEMT (Filtronic Compound Semiconductors)

LP750P100 PACKAGED 0.5 WATT POWER PHEMT (Filtronic Compound Semiconductors)

LP750SOT89 LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT (Filtronic Compound Semiconductors)

LP7568130F Lithium Iron Phosphate Battery (EEMB)

LP75W-108 LED Optimized Drivers (EPtronics)

LP75W-108-C0700 LED Optimized Drivers (EPtronics)

LP75W-12 LED Optimized Drivers (EPtronics)

TAGS

LP7512 ULTRA LOW NOISE PHEMT Filtronic Compound Semiconductors

Image Gallery

LP7512 Datasheet Preview Page 2

LP7512 Distributor