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LP7512 Datasheet - Filtronic Compound Semiconductors

LP7512 ULTRA LOW NOISE PHEMT

AND APPLICATIONS The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic .

LP7512 Features

* 0.6 dB Noise Figure at 12 GHz

* 12 dB Associated Gain at 12 GHz

* Low DC Power Consumption

* Excellent Phase Noise DRAIN BOND PAD (2X) GATE BOND PAD (2X) LP7512 SOURCE BOND PAD (2x) DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PA

LP7512_FiltronicCompoundSemiconductors.pdf

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Datasheet Details

Part number:

LP7512

Manufacturer:

Filtronic Compound Semiconductors

File Size:

36.64 KB

Description:

Ultra low noise phemt.

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LP7512 LP7512 ULTRA LOW NOISE PHEMT Filtronic Compound Semiconductors

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