LP7612P70
Filtronic Compound Semiconductors
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Packaged high dynamic range phemt. AND APPLICATIONS The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High E
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LP7612 - HIGH DYNAMIC RANGE PHEMT
(Filtronic Compound Semiconductors)
HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 1.0 dB Noise Figure at 18 GHz .
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(LAND-HOP MICRO-ELECTRONICS)
SHENZHEN LAND-HOP MICRO-ELECTRONICS LTD.
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z ,; z RC ,; z ; z CMOS ,,:2.5~5V;
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(Silvan Chip)
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LP7618B
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LP702 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
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(Silvan Chip)
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LP7100B
LP7100B :(:RT0100)
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LP7100B :(:RT0100)
2~5V; CMOS ; RC ; ; 。
LP7100B :(:RT0100)
.
LP721 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
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polyfet rf devices
LP721
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil.
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LP750 - 0.5 W POWER PHEMT
(Filtronic Compound Semiconductors)
0.5 W POWER PHEMT • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 18 GHz ♦ 10 dB Power Gain at 18 GHz ♦ 24 dBm Output Power at 1-dB Compressio.
LP750P100 - PACKAGED 0.5 WATT POWER PHEMT
(Filtronic Compound Semiconductors)
LP750P100
PACKAGED 0.5 WATT POWER PHEMT
• FEATURES ♦ ♦ ♦ ♦ ♦ • 41 dBm IP3 at 12 GHz 27.5 dBm P-1dB at 12 GHz 10.5 dB Power Gain at 12 GHz 2.5 dB Noise.