LP7612P70 Datasheet - Filtronic Compound Semiconductors

LP7612P70, PACKAGED HIGH DYNAMIC RANGE PHEMT

PACKAGED HIGH DYNAMIC RANGE PHEMT * .
AND APPLICATIONS The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility.

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Datasheet Details

Part number:

LP7612P70

Manufacturer:

Filtronic Compound Semiconductors

File Size:

61.51 KB

Description:

PACKAGED HIGH DYNAMIC RANGE PHEMT

Features

* 20 dBm Output Power at 1-dB Compression at 18 GHz
* 7.5 dB Power Gain at 18 GHz
* 16 dB Small Signal Gain at 2 GHz
* 0.8 dB Noise Figure at 2 GHz LP7612P70

Applications

* The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasi

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LP7612P70 PACKAGED HIGH DYNAMIC RANGE PHEMT Filtronic Compound Semiconductors

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