LP7612P70 Datasheet - Filtronic Compound Semiconductors

LP7612P70 PACKAGED HIGH DYNAMIC RANGE PHEMT

AND APPLICATIONS The LP7612P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure.

LP7612P70_FiltronicCompoundSemiconductors.pdf

LP7612P70 Datasheet Preview — Preview of LP7612P70 PDF

Datasheet Details

Part number:

LP7612P70

Manufacturer:

Filtronic Compound Semiconductors

File Size:

61.51 KB

Description:

Packaged high dynamic range phemt.

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LP7612P70 LP7612P70 PACKAGED HIGH DYNAMIC RANGE PHEMT Filtronic Compound Semiconductors

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