LP722 Datasheet, Transistor, Polyfet RF Devices

LP722 Features

• Transistor low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 35.0 Wa

PDF File Details

Part number:

LP722

Manufacturer:

Polyfet RF Devices

File Size:

35.74kb

Download:

📄 Datasheet

Description:

Silicon gate enhancement mode rf power ldmos transistor. Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Pa

LP722 Application

• Applications Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" pro

TAGS

LP722

Polyfet RF Devices

📁 Related Datasheet

LP721 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil.

LP701 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices LP701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil.

LP702 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices LP702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil.

LP7100B - Tone siren (Silvan Chip)
Silvan Chip Electronics Tech. Co., Ltd. LP7100B LP7100B ：(:RT0100) LP7100B CMOS ，。 LP7100B ：(:RT0100) 2~5V; CMOS ； RC ； ； 。 LP7100B ：(:RT0100) .

LP750 - 0.5 W POWER PHEMT (Filtronic Compound Semiconductors)
0.5 W POWER PHEMT • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 18 GHz ♦ 10 dB Power Gain at 18 GHz ♦ 24 dBm Output Power at 1-dB Compressio.

LP750P100 - PACKAGED 0.5 WATT POWER PHEMT (Filtronic Compound Semiconductors)
LP750P100 PACKAGED 0.5 WATT POWER PHEMT • FEATURES ♦ ♦ ♦ ♦ ♦ • 41 dBm IP3 at 12 GHz 27.5 dBm P-1dB at 12 GHz 10.5 dB Power Gain at 12 GHz 2.5 dB Noise.

LP750SOT89 - LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT (Filtronic Compound Semiconductors)
LP750SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 26 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 17 dB Power Gain at 1.8 GHz ♦ 0..

LP7510 - PC Power Supply Supervisors (ETC)
.. . DataShee . . DataSheet 4 U . .. . et4U. D.

LP75103122F - Lithium Iron Phosphate Battery (EEMB)
Document Name Document No. Ver LP75103122F Specification ZJQM-RD-SPC-A0528 0.0 Date Page 2014-12-2 1/7 EEMB CO., LTD Lithium Iron Phosphate B.

LP7512 - ULTRA LOW NOISE PHEMT (Filtronic Compound Semiconductors)
ULTRA LOW NOISE PHEMT • FEATURES ♦ 0.6 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ Low DC Power Consumption ♦ Excellent Phase Noise .