Part number:
LP722
Manufacturer:
Polyfet RF Devices
File Size:
35.74 KB
Description:
Silicon gate enhancement mode rf power ldmos transistor.
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 35.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25
LP722
Polyfet RF Devices
35.74 KB
Silicon gate enhancement mode rf power ldmos transistor.
📁 Related Datasheet
LP721 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR (Polyfet RF Devices)
LP701 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR (Polyfet RF Devices)
LP702 SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR (Polyfet RF Devices)
LP7100B Tone siren (Silvan Chip)
LP750 0.5 W POWER PHEMT (Filtronic Compound Semiconductors)
LP750P100 PACKAGED 0.5 WATT POWER PHEMT (Filtronic Compound Semiconductors)
LP750SOT89 LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT (Filtronic Compound Semiconductors)
LP7510 PC Power Supply Supervisors (ETC)
LP75103122F Lithium Iron Phosphate Battery (EEMB)
LP7512 ULTRA LOW NOISE PHEMT (Filtronic Compound Semiconductors)
