MRF6S9160HSR3, MRF6S9160HR3 Datasheet - Freescale Semiconductor

MRF6S9160HSR3 RF Power Field Effect Transistors

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1200 mA, Pout = 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traf.

MRF6S9160HSR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Lower Thermal Resistance Package

* Low Gold Plating Thickness

MRF6S9160HR3_FreescaleSemiconductor.pdf

MRF6S9160HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S9160HSR3, MRF6S9160HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF6S9160HSR3, MRF6S9160HR3

Manufacturer:

Freescale Semiconductor

File Size:

563.31 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF6S9160HSR3, MRF6S9160HR3.
Please refer to the document for exact specifications by model.

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MRF6S9160HSR3 MRF6S9160HR3 Power Field Effect Transistors Freescale Semiconductor

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