MRF7S18125AHR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF7S18125AHR3, RF Power Field Effect Transistors

1 μF, 50 V Chip Capacitor 4.7 μF, 50 V Chip Capacitors 220 μF, 63 V Electrolytic Chip Capacitor 8.2 pF Chip Capacitors 0.2 pF Chip Capacitors 0.5 pF Chip Capacitor 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Part Number C3216X5R1H105K C4532X5R1H475M 2222 136 68221 ATC100B8R2BT500XT ATC100B

Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF7S18125AH Rev.

0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulations.

GSM Application Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 125 Watts CW, f = 1880 MHz.

Power Gain

MRF7S18125AHR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S18125AHR3 MRF7S18125AHSR3 1805