Description
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev.1, 6/2006 RF Power Field Effect Transistors N - Chann.
10 μF, 35 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 5.
Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Designed for Digital Predistortion Error Correction Systems
Applications
* with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
* Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 29 Watts Avg. , Full
