MRF7S19100NBR1, MRF7S19100NR1 - RF Power Field Effect Transistors

Motorola Semiconductor

MRF7S19100NBR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF7S19100NBR1, MRF7S19100NR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	MRF7S19100NBR1, MRF7S19100NR1
Manufacturer	Motorola Semiconductor
File Size	576.61 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF7S19100NR1_MotorolaSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF7S19100NBR1, MRF7S19100NR1. Please refer to the document for exact specifications by model.

MRF7S19100NBR1 Product details

Description

10 μF, 35 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 5.1 pF Chip Capacitors 8.2 pF Chip Capacitors 10 pF Chip Capacitor 1 KΩ, 1/4 W Chip Resistor 10 KΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number T491D106K035AT GRM55DR61H106KA88L 600B5R1BT250XT 600B8R2BT250XT 600B100BT250XT CRCW12061001F100 CRCW12061002F100 CRCW120610R0F100 Manufacturer Kemet Murata ATC ATC ATC Vishay Vishay Vishay MRF7S19100NR1 MRF7S19100NBR1 4 RF Device Data Freescale Semiconductor www.DataSheet4U.com R

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Designed for Digital Predistortion Error Correction Systems.
200°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MRF7S19100NR1 MRF7S19100NBR1 1930 - 1990 MHz, 29 W AVG. , 28 V.

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Published: Dec 30, 2006 |