* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Designed for Digital Predistortion Error Correction Systems
MRF7S19100NBR1 Datasheet (576.61 KB)
MRF7S19100NBR1
Motorola Semiconductor
576.61 KB
Rf power field effect transistors.
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Freescale Semiconductor Technical Data
Document Number: MRF7S19100N Rev. 1, 6/2006
RF Power Field Effect Transistors
N - Chann.
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