MRF7S19210HSR3, MRF7S19210HR3 Datasheet - Freescale Semiconductor

Datasheet Details

Part number:

MRF7S19210HSR3, MRF7S19210HR3

Manufacturer:

Freescale Semiconductor

File Size:

546.69 KB

Description:

RF Power Field Effect Transistors

Note:

This datasheet PDF includes multiple part numbers: MRF7S19210HSR3, MRF7S19210HR3.
Please refer to the document for exact specifications by model.

Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate - Source Voltage Range for Improved Cla

MRF7S19210HR3_FreescaleSemiconductor.pdf

MRF7S19210HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF7S19210HSR3, MRF7S19210HR3. Please refer to the document for exact specifications by model.

MRF7S19210HSR3, MRF7S19210HR3, RF Power Field Effect Transistors

10 μF, 50 V Chip Capacitors 100 nF Chip Capacitors 8.2 pF Chip Capacitors 0.2 pF Chip Capacitor 1.8 pF Chip Capacitor 0.4 pF Chip Capacitor 0.5 pF Chip Capacitors 470 μF Electrolytic Capacitors 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Part Number C5750X5R1H106M 12065C104KAT2A ATC100B8R2

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19210H Rev.

0, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulations.

Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., Full Frequency Band, 3GPP Test

MRF7S19210HSR3 Distributor

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MRF7S19210HR3 Power Field Effect Transistors Freescale Semiconductor

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