Description
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19210H Rev.0, 12/2008 RF Power Field Effect Transistors N - Chan.
10 μF, 50 V Chip Capacitors 100 nF Chip Capacitors 8.
Features
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Cla
Applications
* with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.
* Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg. , Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clippi
