MRF7S19100NR1 RF Power Field Effect Transistors

Motorola Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev.1, 6/2006 RF Power Field Effect Transistors N - Chann.
10 μF, 35 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 5.

📥 Download Datasheet

MRF7S19100NR1 Datasheet Preview — Preview of MRF7S19100NR1 PDF

Datasheet Specifications

Part number: MRF7S19100NR1
Manufacturer: Motorola Semiconductor
File Size: 576.61 KB
Datasheet: MRF7S19100NR1_MotorolaSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Designed for Digital Predistortion Error Correction Systems

Applications

* with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
* Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 29 Watts Avg. , Full

MRF7S19100NR1 Distributors

📁 Related Datasheet

MRF7S19120NR1 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19080HR3 MRF7S19080HSR3 MRF7S19210HR3

📌 All Tags

MRF7S19100NR1 Power Field Effect Transistors Motorola Semiconductor

Motorola Semiconductor MRF7S19100NR1-like datasheet