MRF7S19100NR1 Datasheet (Motorola Semiconductor) - RF Power Field Effect Transistors

MRF7S19100NR1, RF Power Field Effect Transistors

10 μF, 35 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 5.1 pF Chip Capacitors 8.2 pF Chip Capacitors 10 pF Chip Capacitor 1 KΩ, 1/4 W Chip Resistor 10 KΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number T491D106K035AT GRM55DR61H106KA88L 600B5R1BT250XT 600B8R2BT250XT 600B100BT250XT CRCW

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev.

1, 6/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.

Suitable for CDMA and multicarrier amplifier applications.

To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.

Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000

MRF7S19100NR1 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Designed for Digital Predistortion Error Correction Systems