MRF7S15100HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF7S15100HR3, RF Power Field Effect Transistors

Short Ferrite Bead 15 pF Chip Capacitors 0.5 pF Chip Capacitor 10 pF Chip Capacitor 6.8 μF, 50 V Chip Capacitors 100 μF, 50 V Electrolytic Capacitors 2.2 μF, 50 V Chip Capacitors 7.15 nH Inductors 100 Ω, 1/4 W Chip Resistors 10 KΩ, 1/4 W Chip Resistor Part Number 2743019447 ATC100B150JT500XT ATC100B

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev.

0, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1470 to 1510 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.

Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ

MRF7S15100HR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate - Source Voltage Range for Improved Cla