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MRF7S16150HSR3, MRF7S16150HR3 RF Power Field Effect Transistors

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Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev.1, 12/2008 RF Power Field Effect Transistors N - Chan.
Small Ferrite Bead 10 μF, 35 V Electrolytic Capacitor 0.

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This datasheet PDF includes multiple part numbers: MRF7S16150HSR3, MRF7S16150HR3. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
MRF7S16150HSR3, MRF7S16150HR3
Manufacturer
Freescale Semiconductor
File Size
491.15 KB
Datasheet
MRF7S16150HR3_FreescaleSemiconductor.pdf
Description
RF Power Field Effect Transistors
Note
This datasheet PDF includes multiple part numbers: MRF7S16150HSR3, MRF7S16150HR3.
Please refer to the document for exact specifications by model.

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C Operation
* RoHS Compliant
* In Tape and Ree

Applications

* with frequencies up to 1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
* Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 32 Watts Avg. , f = 1600 and 1660 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth,

MRF7S16150HSR3 Distributors

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