MRF7S35120HSR3 Datasheet, Effect Transistor, Motorola

Rf power field effect transistor

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	NXP Semiconductors	MRF7S35120HSR3	MRF7S35120HSR3	Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R	Verical	105	1 units	$177.12	🛒 Buy Now

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MRF7S35120HSR3

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Motorola

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479.34 KB

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Description:

Rf power field effect transistor.
47 Ω, 100 MHz Short Ferrite Bead 470 μF, 63 V Electrolytic Capacitor 47 μF, 50 V Electrolytic Capacitor 22 μF, 35 V Tantalum Capacitors 3.3 pF Chip Capacitor 2.7 pF Chip Capacitors 22 μF, 25 V Tantalu.

✔ MRF7S35120HSR3 Features

Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrat

✔ MRF7S35120HSR3 Application

operating at frequencies between 3100 and 3500 MHz.
Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150

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MRF7S35120HSR3 Power Field Effect Transistor Motorola