MRF7S35120HSR3 Datasheet - Motorola

MRF7S35120HSR3 RF Power Field Effect Transistor

47 Ω, 100 MHz Short Ferrite Bead 470 μF, 63 V Electrolytic Capacitor 47 μF, 50 V Electrolytic Capacitor 22 μF, 35 V Tantalum Capacitors 3.3 pF Chip Capacitor 2.7 pF Chip Capacitors 22 μF, 25 V Tantalum Capacitors 51 Ω, 1/4 W Chip Resistor Part Number 2743019447 477KXM063M 476KXM050M T491X226K035AT A.

Freescale Semiconductor Technical Data Document Number: MRF7S35120HS www.DataSheet4U.com Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz. Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain 12 dB Drain Efficiency.

MRF7S35120HSR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Greater Negative Gate - Source Voltage Range for Improved Class C Oper

MRF7S35120HSR3_Motorola.pdf