MRF7S38075HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base stat.
Part Number B1, B2 Small Ferrite Beads 2743019447 C1, C2, C4, C6 2.

📥 Download Datasheet

MRF7S38075HR3 Datasheet Preview — Preview of MRF7S38075HR3 PDF

Datasheet Specifications

Part number: MRF7S38075HR3
Manufacturer: Freescale Semiconductor
File Size: 429.76 KB
Datasheet: MRF7S38075HR3-FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C Operation
* RoHS Compliant
* In Tape and

Applications

* with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
* Typical WiMAX Performance: VDD = 30 Volts, IDQ 12 Watts Avg. , f = 3400 and 3600 MHz, 802.16d, MHz Channel Bandwidth, Input Signal PAR = 9.5 6d=4B9Q@0A0M0m.

MRF7S38075HR3 Distributors

📁 Related Datasheet

MRF7S35120HSR3 MRF7S18170HR3 MRF7S18170HSR3 MRF7S19100NBR1 MRF7S19100NR1 MRF7S24250N

📌 All Tags

MRF7S38075HR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF7S38075HR3-like datasheet