MRF7S24250N RF Power LDMOS Transistor

NXP

Description

NXP Semiconductors Technical Data RF Power LDMOS Transistor N *Channel Enhancement *Mode Lateral MOSFET The 250 W CW RF power transist.

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Datasheet Specifications

Part number: MRF7S24250N
Manufacturer: NXP ↗
File Size: 642.63 KB
Datasheet: MRF7S24250N-NXP.pdf
Description: RF Power LDMOS Transistor

Features

* Characterized with series equivalent large
* signal impedance parameters
* Internally matched for ease of use
* Qualified up to a maximum of 32 VDD operation

Applications

* at 2450 MHz. This device is suitable for use in CW, pulse and linear applications. This high gain, high efficiency rugged device is targeted to replace industrial magnetrons and will provide longer life and easier servicing. Typical Performance: In 2400
* 2500 MHz reference circuit, VDD = 32

MRF7S24250N Distributors

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MRF7S24250N Power LDMOS Transistor NXP

NXP MRF7S24250N-like datasheet