MRF7S21170HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N *Channel Enhancement *Mode Lateral MOSFETs Designed for CDM.

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MRF7S21170HR3 Datasheet Preview — Preview of MRF7S21170HR3 PDF

Datasheet Specifications

Part number: MRF7S21170HR3
Manufacturer: Freescale Semiconductor
File Size: 507.95 KB
Datasheet: MRF7S21170HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate
* Source Voltage Range for Improved Class C Op

Applications

* with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN
* PCS/cellular radio and WLL applications.
* Typical Single
* Carrier W
* CDMA 1C4h0a0nnmeAl ,BPanoudtw=id5t0h Watts Avg. , f = 3.84

MRF7S21170HR3 Distributors

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MRF7S21170HR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF7S21170HR3-like datasheet