MRF7S21170HR3 Datasheet - Freescale Semiconductor

MRF7S21170HR3 RF Power Field Effect Transistors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN PCS/cellular radio and WLL applications. Typical Single Carrier W CDMA 1C4h0a0nnmeAl ,BPanoudtw=id5t0h Watts Avg., f = 3.84 MHz, =Pe2r1fo6r7m.5an.

MRF7S21170HR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large

* Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate

* Source Voltage Range for Improved Class C Op

MRF7S21170HR3 Datasheet (507.95 KB)

MRF7S21170HR3 Datasheet Preview — Preview of MRF7S21170HR3 PDF

Datasheet Details

Part number:

MRF7S21170HR3

Manufacturer:

Freescale Semiconductor

File Size:

507.95 KB

Description:

Rf power field effect transistors.

📁 Related Datasheet

MRF7S21170HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF7S21150HR3 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF7S21150HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF7S24250N RF Power LDMOS Transistor (NXP)

MRF7S15100HR3 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF7S15100HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF7S16150HR3 RF Power Field Effect Transistors (Freescale Semiconductor)

MRF7S16150HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)

TAGS

MRF7S21170HR3 Power Field Effect Transistors Freescale Semiconductor

MRF7S21170HR3 Distributor