MRF7S21150HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station.

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MRF7S21150HR3 Datasheet Preview — Preview of MRF7S21150HR3 PDF

Datasheet Specifications

Part number: MRF7S21150HR3
Manufacturer: Freescale Semiconductor
File Size: 485.44 KB
Datasheet: MRF7S21150HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Cla

Applications

* with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
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MRF7S21150HR3 Distributors

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MRF7S21150HR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF7S21150HR3-like datasheet