MRF7S16150HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev.1, 12/2008 RF Power Field Effect Transistors N - Chan.
Small Ferrite Bead 10 μF, 35 V Electrolytic Capacitor 0.

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Datasheet Specifications

Part number: MRF7S16150HR3
Manufacturer: Freescale Semiconductor
File Size: 491.15 KB
Datasheet: MRF7S16150HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C Operation
* RoHS Compliant
* In Tape and Ree

Applications

* with frequencies up to 1700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
* Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 32 Watts Avg. , f = 1600 and 1660 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth,

MRF7S16150HR3 Distributors

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MRF7S16150HR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF7S16150HR3-like datasheet