MRF7S16150HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF7S16150HR3, RF Power Field Effect Transistors

Small Ferrite Bead 10 μF, 35 V Electrolytic Capacitor 0.01 μF, 50 V Chip Capacitors 10 pF Chip Capacitors 47 pF Chip Capacitors 22 μF, 35 V Tantalum Capacitors 220 μF, 50 V Electrolytic Capacitor 1 KΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number 2743019447 EMVY350ADA100ME55G C1825C103J

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev.

1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 1700 MHz.

Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.

Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 32 Watts Avg., f = 1600 and 1660 MHz, 802.16d, 64 QAM 3/4,

MRF7S16150HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate - Source Voltage Range for Improved Class C Operation

* RoHS Compliant

* In Tape and Ree