MRF7S18125BHR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF7S18125BHR3, RF Power Field Effect Transistors

1 μF, 50 V Chip Capacitor 4.7 μF, 50 V Chip Capacitors 220 μF, 63 V Electrolytic Chip Capacitor 6.8 pF Chip Capacitors 1 pF Chip Capacitors 0.2 pF Chip Capacitors 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Part Number 12065G105AT2A GRM55ER71H475KA01L 2222 136 68221 ATC100B6R8BT500XT ATC10

Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF7S18125BH Rev.

0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulations.

GSM Application Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 125 Watts CW, f = 1930 MHz.

Power Gain

MRF7S18125BHR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S18125BHR3 MRF7S18125BHSR3 1930