MRF7S18125BHR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF7S18125BH Rev.0, 11/2008 RF Power Field Effect Transistors N - Chan.
1 μF, 50 V Chip Capacitor 4.

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Datasheet Specifications

Part number: MRF7S18125BHR3
Manufacturer: Freescale Semiconductor
File Size: 511.70 KB
Datasheet: MRF7S18125BHR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* RoHS Compliant
* In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S18125BHR3 MRF7S18125BHSR3 1930

Applications

* with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. GSM Application
* Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 125 Watts CW, f = 1930 MHz. Power Gain
* 16.5 dB Drain Efficiency

MRF7S18125BHR3 Distributors

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MRF7S18125BHR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF7S18125BHR3-like datasheet