Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base stat.
Part Number
B1, B2
Small Ferrite Beads
2743019447
C1, C2, C4, C6
2.
Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
* RoHS Compliant
* In Tape and
Applications
* with frequencies up to
3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
* Typical WiMAX Performance: VDD = 30 Volts, IDQ 12 Watts Avg. , f = 3400 and 3600 MHz, 802.16d, MHz Channel Bandwidth, Input Signal PAR = 9.5
6d=4B9Q@0A0M0m.
