MRF7S19080HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF7S19080HR3, RF Power Field Effect Transistors

15 pF Chip Capacitors 13 pF Chip Capacitors 10 μF Chip Capacitor 1000 pF Chip Capacitor 0.1 μF Chip Capacitors 5.1 pF Chip Capacitor 6.8 pF Chip Capacitor 2.2 μF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 100 μF, 50 V Electrolytic Capacitor 330 Ω, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resisto

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev.

0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.

Suitable for CDMA and multicarrier amplifier applications.

To be used in Class AB and Class C for TD - SCDMA and PCN - PCS/cellular radio applications.

Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ

MRF7S19080HR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate - Source Voltage Range for Improved Cla