MRF7S19170HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF7S19170HR3, RF Power Field Effect Transistors

1.8 pF Chip Capacitors 8.2 pF Chip Capacitors 100 pF Chip Capacitor 100 nF Chip Capacitor 10 μF Chip Capacitors 0.5 pF Chip Capacitor 1.5 pF Chip Capacitor 0.3 pF Chip Capacitor 0.8 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor, Axial 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Par

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev.

0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.

Suitable for CDMA and multicarrier amplifier applications.

To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.

Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 140

MRF7S19170HR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate - Source Voltage Range for Improved Cla