MRF7S19120NR1 RF Power Field Effect Transistor

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev.0, 9/2007 RF Power Field Effect Transistor N - Channe.
10 μF, 35 V Tantalum Capacitor 0.

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Datasheet Specifications

Part number: MRF7S19120NR1
Manufacturer: Freescale Semiconductor
File Size: 534.43 KB
Datasheet: MRF7S19120NR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistor

Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Cla

Applications

* with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
* Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 36 Watts Avg. , Full

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MRF7S19120NR1 Power Field Effect Transistor Freescale Semiconductor

Freescale Semiconductor MRF7S19120NR1-like datasheet