* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Cla
MRF7S19120NR1 Datasheet (534.43 KB)
MRF7S19120NR1
Freescale Semiconductor
534.43 KB
Rf power field effect transistor.
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Freescale Semiconductor Technical Data
Document Number: MRF7S19120N Rev. 0, 9/2007
RF Power Field Effect Transistor
N - Channe.
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