MRF7S19210HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF7S19210HR3, RF Power Field Effect Transistors

10 μF, 50 V Chip Capacitors 100 nF Chip Capacitors 8.2 pF Chip Capacitors 0.2 pF Chip Capacitor 1.8 pF Chip Capacitor 0.4 pF Chip Capacitor 0.5 pF Chip Capacitors 470 μF Electrolytic Capacitors 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Part Number C5750X5R1H106M 12065C104KAT2A ATC100B8R2

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19210H Rev.

0, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulations.

Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., Full Frequency Band, 3GPP Test

MRF7S19210HR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate - Source Voltage Range for Improved Cla