MRF7S19210HR3 RF Power Field Effect Transistors

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19210H Rev.0, 12/2008 RF Power Field Effect Transistors N - Chan.
10 μF, 50 V Chip Capacitors 100 nF Chip Capacitors 8.

📥 Download Datasheet

MRF7S19210HR3 Datasheet Preview — Preview of MRF7S19210HR3 PDF

Datasheet Specifications

Part number: MRF7S19210HR3
Manufacturer: Freescale Semiconductor
File Size: 546.69 KB
Datasheet: MRF7S19210HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Cla

Applications

* with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.
* Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg. , Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clippi

MRF7S19210HR3 Distributors

📁 Related Datasheet

MRF7S19100NBR1 MRF7S19100NR1 MRF7S18170HR3 MRF7S18170HSR3 MRF7S24250N MRF7S35120HSR3

📌 All Tags

MRF7S19210HR3 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF7S19210HR3-like datasheet