* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Cla
MRF7S19210HR3 Datasheet (546.69 KB)
MRF7S19210HR3
Freescale Semiconductor
546.69 KB
Rf power field effect transistors.
www.DataSheet4U.com
Freescale Semiconductor Technical Data
Document Number: MRF7S19210H Rev. 0, 12/2008
RF Power Field Effect Transistors
N - Chan.
📁 Related Datasheet
MRF7S19210HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF7S19080HR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF7S19080HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF7S19100NBR1 RF Power Field Effect Transistors (Motorola Semiconductor)
MRF7S19100NR1 RF Power Field Effect Transistors (Motorola Semiconductor)
MRF7S19120NR1 RF Power Field Effect Transistor (Freescale Semiconductor)
MRF7S19170HR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF7S19170HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF7S15100HR3 RF Power Field Effect Transistors (Freescale Semiconductor)
MRF7S15100HSR3 RF Power Field Effect Transistors (Freescale Semiconductor)
