MRF9030MBR1, MRF9030MBR1-1 RF POWER FIELD EFFECT TRANSISTORS

Freescale Semiconductor

MRF9030MBR1 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF9030M/D The RF Sub-Micron MOSFET Line RF Power Fiel.
Short Ferrite Bead, Surface Mount Long Ferrite Bead, Surface Mount 47 pF Chip Capacitors, B Case 0.

MRF9030MBR1 Features

* Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs be

MRF9030MBR1 Applications

* with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.
* Typical Performance at 945 MHz, 26 Volts Output Power
* 30 Watts PEP Power Gain

📥 Download Datasheet

MRF9030MBR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF9030MBR1, MRF9030MBR1-1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF9030MBR1, MRF9030MBR1-1
Manufacturer: Freescale Semiconductor
File Size: 620.78 KB
Datasheet: MRF9030MBR1-1_FreescaleSemiconductor.pdf
Description: RF POWER FIELD EFFECT TRANSISTORS
Note: This datasheet PDF includes multiple part numbers: MRF9030MBR1, MRF9030MBR1-1.
Please refer to the document for exact specifications by model.

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POWER FIELD EFFECT TRANSISTORS Freescale Semiconductor

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