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MRF9030MR1, MRF9030MBR1-1 Datasheet - Freescale Semiconductor

MRF9030MR1 RF POWER FIELD EFFECT TRANSISTORS

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9030M/D The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. Typical Performance.

MRF9030MR1 Features

* Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs be

MRF9030MBR1-1_FreescaleSemiconductor.pdf

This datasheet PDF includes multiple part numbers: MRF9030MR1, MRF9030MBR1-1. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

MRF9030MR1, MRF9030MBR1-1

Manufacturer:

Freescale Semiconductor

File Size:

620.78 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF9030MR1, MRF9030MBR1-1.
Please refer to the document for exact specifications by model.

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MRF9030MR1 MRF9030MBR1-1 POWER FIELD EFFECT TRANSISTORS Freescale Semiconductor

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