MW6S010GNR1 Datasheet - Freescale Semiconductor

MW6S010GNR1 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Part Number 2743019447 100B470JP500X T491D226K035AS 13668221 CDR33BX104AKWS 272915L 100B240JP500X 100B6R8JP500X 100B7R5JP500X A04T- 5 CRCW12061001F100 Manufacturer Fair- Rite ATC Kemet Phillips Kemet Johanson ATC ATC ATC Coilcraft Vishay - Dale MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semico.

Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain 18 dB Drain Efficiency 32% .

MW6S010GNR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* On - Chip RF Feedback for Broadband Stability www.DataSheet4U.com

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* 200°C Capable Plastic Package

MW6S010GNR1 Datasheet (761.88 KB)