Description
Freescale Semiconductor Technical Data Document Number: MW6S010N Rev.3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lat.
Part Number 2743019447 100B470JP500X T491D226K035AS 13668221 CDR33BX104AKWS 272915L 100B240JP500X 100B6R8JP500X 100B7R5JP500X A04T- 5 CRCW12061001F100.
Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* On - Chip RF Feedback for Broadband Stability www. DataSheet4U. com
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
Applications
* with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
* Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain
* 18 dB Drain Efficiency
* 32% IMD
* - 37 dBc
