* Characterized with Series Equivalent Large - Signal Impedance Parameters
* On - Chip RF Feedback for Broadband Stability www.DataSheet4U.com
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
MW6S010GNR1 Datasheet (761.88 KB)
MW6S010GNR1
Freescale Semiconductor
761.88 KB
Lateral n-channel broadband rf power mosfets.
Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lat.
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