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MW6S010NR1 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

MW6S010NR1 Description

Freescale Semiconductor Technical Data Document Number: MW6S010N Rev.3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lat.
Part Number 2743019447 100B470JP500X T491D226K035AS 13668221 CDR33BX104AKWS 272915L 100B240JP500X 100B6R8JP500X 100B7R5JP500X A04T- 5 CRCW12061001F100.

MW6S010NR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* On - Chip RF Feedback for Broadband Stability www. DataSheet4U. com
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package

MW6S010NR1 Applications

* with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
* Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain
* 18 dB Drain Efficiency
* 32% IMD
* - 37 dBc

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Datasheet Details

Part number
MW6S010NR1
Manufacturer
Freescale Semiconductor
File Size
761.88 KB
Datasheet
MW6S010NR1_FreescaleSemiconductor.pdf
Description
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

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LATERAL N-CHANNEL BROADBAND POWER MOSFETs Freescale Semiconductor
Freescale Semiconductor MW6S010NR1-like datasheet