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MW4IC2230NBR1, MW4IC2230GNBR1 RF LDMOS Wideband Integrated Power Amplifiers

MW4IC2230NBR1 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev.6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers.
10 μF, 35 V Tantalum Capacitors 8.

MW4IC2230NBR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
* On - Chip Current Mirror gm Reference FET f

MW4IC2230NBR1 Applications

* It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CD

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MW4IC2230NBR1, MW4IC2230GNBR1. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MW4IC2230NBR1, MW4IC2230GNBR1
Manufacturer
Freescale Semiconductor
File Size
737.73 KB
Datasheet
MW4IC2230GNBR1_FreescaleSemiconductor.pdf
Description
RF LDMOS Wideband Integrated Power Amplifiers
Note
This datasheet PDF includes multiple part numbers: MW4IC2230NBR1, MW4IC2230GNBR1.
Please refer to the document for exact specifications by model.

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LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor
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