High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
600V
1,2
✔ 2SK2645-01MR Application
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteris
2SK2645 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
2SK2645
·FEATURES ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·High speed Switching ·Repe.
2SK2640-01MR - N-channel MOS-FET
(Fuji Electric)
2SK2640-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
2SK2641-01 - N-channel MOS-FET
(Fuji Electric)
2SK2641-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
2SK2642-01MR - N-Channel Silicon Power MOSFET
(Fuji Semiconductors)
o c . U 4 Features t e High speed switching e h Low on-resistance S No secondary breakdown apower t Low driving a High D voltage . V =±35V Guarantee w.
2SK2643-01 - N-channel MOS-FET
(Fuji Electric)
2SK2643-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
2SK2644-01 - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
..
2SK2644-01
Features
High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarant.
2SK2646-01 - N-channel MOS-FET
(Fuji Electric)
2SK2646-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
2SK2647-01 - N-channel MOS-FET
(Fuji Electric)
2SK2647-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
2SK2647-01MR - N-channel MOS-FET
(Fuji Electric)
2SK2647-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
2SK2648-01 - N-channel MOS-FET
(Fuji Electric)
2SK2648-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
