High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated
N-channel MOS-FET
900V
2Ω
✔ K2654-01 Application
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteris
K2651-01MR - N-channel MOS-FET
(Fuji Electric)
2SK2651-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
K2655-01R - N-channel MOS-FET
(Fuji Electric)
2SK2655-01R
FAP-IIS Series
> Features
- High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = .
K2600G - Sidac
(JIEJIE)
JIEJIE MICROELECTRONICS CO. , Ltd
K0900G Series Sidac
Rev.1.0
DESCRIPTION:
The sidac is a silicon bilateral voltage triggered switch with greater p.
K2600G - Axial Leaded Silicon Bilateral Voltage Triggered
(Sunmate)
K0900G - K2600G
Axial Leaded Silicon Bilateral Voltage Triggered
Features
· Excellent capability of absorbing transient surge · Quick response to sur.
K2600S - Sidac
(JIEJIE)
JIEJIE MICROELECTRONICS CO. , Ltd
K0900S Series Sidac
Rev.1.0
DESCRIPTION:
The sidac is a silicon bilateral voltage triggered switch with greater p.
K2601 - 2SK2601
(Toshiba Semiconductor)
2SK2601
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2601
DC−DC Converter, Relay Drive and Motor Drive Applications
z Low d.
K2604 - 2SK2604
(Toshiba Semiconductor)
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K2605 - 2SK2605
(Toshiba Semiconductor)
2SK2605
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2605
Switching Regulator Applications
Unit: mm
z Low drain−source .
K2607 - Silicon N-Channel FET
(Toshiba Semiconductor)
2SK2607
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2607
Chopper Regulator, DC−DC Converter and Moter Drive Applications.
K2608 - 2SK2608
(Toshiba Semiconductor)
2SK2608
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2608
Switching Regulator Applications
z Low drain−source ON resistan.
