K2655-01R
Fuji Electric
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N-channel mos-fet.
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High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
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High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
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· Excellent capability of absorbing transient surge · Quick response to sur.
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z Low d.
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K2605 - 2SK2605
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
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Unit: mm
z Low drain−source .
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