Part number:
K2655-01R
Manufacturer:
Fuji Electric
File Size:
285.52 KB
Description:
N-channel mos-fet.
K2655-01R Datasheet (285.52 KB)
* - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absol
K2655-01R Datasheet (285.52 KB)
K2655-01R
Fuji Electric
285.52 KB
N-channel mos-fet.
📁 Related Datasheet
K2651-01MR - N-channel MOS-FET
(Fuji Electric)
2SK2651-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
K2654-01 - 2SK2654-01
(Fuji Electric)
2SK2654-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
K2600G - Sidac
(JIEJIE)
JIEJIE MICROELECTRONICS CO. , Ltd
K0900G Series Sidac
Rev.1.0
DESCRIPTION:
The sidac is a silicon bilateral voltage triggered switch with greater p.
K2600G - Axial Leaded Silicon Bilateral Voltage Triggered
(Sunmate)
K0900G - K2600G
Axial Leaded Silicon Bilateral Voltage Triggered
Features
· Excellent capability of absorbing transient surge · Quick response to sur.
K2600S - Sidac
(JIEJIE)
JIEJIE MICROELECTRONICS CO. , Ltd
K0900S Series Sidac
Rev.1.0
DESCRIPTION:
The sidac is a silicon bilateral voltage triggered switch with greater p.
K2601 - 2SK2601
(Toshiba Semiconductor)
2SK2601
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2601
DC−DC Converter, Relay Drive and Motor Drive Applications
z Low d.
K2604 - 2SK2604
(Toshiba Semiconductor)
..
..
..
..
..
.
K2605 - 2SK2605
(Toshiba Semiconductor)
2SK2605
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2605
Switching Regulator Applications
Unit: mm
z Low drain−source .
