IRFF320 Datasheet - GE

IRFF320 FIELD EFFECT POWER TRANSISTOR

~~D~~~ IRFF320,321 FIELD EFFECT POVVER TRANSISTOR 2.5 AMPERES 400, 350 VOLTS RDS(ON) = 1.8 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating.

IRFF320 Features

* Polysilicon gate - Improved stability and reliability

* No secondary breakdown - Excellent ruggedness

* Ultra-fast switching - Independent of temperature

* Voltage controlled - High transconductance

* Low input capacitance - Reduced drive requirement

IRFF320 Datasheet (186.21 KB)

IRFF320 Datasheet Preview — Preview of IRFF320 PDF

Datasheet Details

Part number:

IRFF320

Manufacturer:

File Size:

186.21 KB

Description:

Field effect power transistor.

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IRFF320 FIELD EFFECT POWER TRANSISTOR GE

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